Transistor BC413

Karakteristik :

• Collector Emitter Voltage VCEO 30 V
• Collector Base Voltage VCBO 45 V
• Emitter Base Voltage VEBO 5.0 V
• Collector Current Continuous IC 100 mA
• Power Dissipation at Ta=25ºC PD 350 Mw Derate Above 25ºC 2.8 mW/ºC
• Power Dissipation at Tc=25ºC PD 1.0 W Derate Above 25ºC 8.0 mW/ºC
• Operating and Storage Junction TJ, Tstg ºC - 55 to +150